NVMFS016N06CT1G
onsemi

onsemi
MOSFET N-CH 60V 10A/33A 5DFN
$0.68
Available to order
Reference Price (USD)
1+
$0.67815
500+
$0.6713685
1000+
$0.664587
1500+
$0.6578055
2000+
$0.651024
2500+
$0.6442425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NVMFS016N06CT1G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NVMFS016N06CT1G for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads