NVTFS6H888NTAG
onsemi
onsemi
MOSFET N-CH 80V 4.7A/12A 8WDFN
$0.64
Available to order
Reference Price (USD)
1,500+
$0.67699
3,000+
$0.63186
7,500+
$0.60027
10,500+
$0.57770
Exquisite packaging
Discount
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Enhance your electronic projects with the NVTFS6H888NTAG single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NVTFS6H888NTAG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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