NVTYS029N08HTWG
onsemi
onsemi
T8 80V N-CH SG IN LFPAK33
$0.38
Available to order
Reference Price (USD)
1+
$0.37610
500+
$0.372339
1000+
$0.368578
1500+
$0.364817
2000+
$0.361056
2500+
$0.357295
Exquisite packaging
Discount
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Meet the NVTYS029N08HTWG by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NVTYS029N08HTWG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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