IAUC120N04S6L005ATMA1
Infineon Technologies
Infineon Technologies
IAUC120N04S6L005ATMA1
$4.10
Available to order
Reference Price (USD)
1+
$4.10000
500+
$4.059
1000+
$4.018
1500+
$3.977
2000+
$3.936
2500+
$3.895
Exquisite packaging
Discount
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The IAUC120N04S6L005ATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IAUC120N04S6L005ATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-53
- Package / Case: 8-PowerTDFN
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