SI7110DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 13.5A PPAK1212-8
$2.27
Available to order
Reference Price (USD)
3,000+
$1.10950
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI7110DN-T1-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SI7110DN-T1-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Vishay Siliconix
SISS66DN-T1-GE3
Rohm Semiconductor
R6035VNX3C16
Vishay Siliconix
SUD35N10-26P-GE3
IXYS
IXTP230N04T4M
NXP USA Inc.
BUK9511-55A,127
Harris Corporation
RFD16N05
Infineon Technologies
IPF05N03LAG
Vishay Siliconix
SQP100N04-3M6_GE3
Vishay Siliconix
IRFPG50PBF
UnitedSiC