NXH010P120MNF1PTG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO
$145.82
Available to order
Reference Price (USD)
1+
$145.82000
500+
$144.3618
1000+
$142.9036
1500+
$141.4454
2000+
$139.9872
2500+
$138.529
Exquisite packaging
Discount
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Discover the high-performance NXH010P120MNF1PTG from onsemi, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the NXH010P120MNF1PTG delivers unmatched performance. Trust onsemi's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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