NXH200T120H3Q2F2SG
onsemi
onsemi
80KW GEN-II Q2PACK-200A MODULE
$133.17
Available to order
Reference Price (USD)
1+
$133.17167
500+
$131.8399533
1000+
$130.5082366
1500+
$129.1765199
2000+
$127.8448032
2500+
$126.5130865
Exquisite packaging
Discount
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onsemi's NXH200T120H3Q2F2SG represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the NXH200T120H3Q2F2SG in industrial servo drives or medium-voltage frequency converters. Trust onsemi's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 330 A
- Power - Max: 679 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 56-PIM/Q2PACK (93x47)
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