NXP3875YVL
Nexperia USA Inc.
Nexperia USA Inc.
NXP3875Y/SOT23/TO-236AB
$0.04
Available to order
Reference Price (USD)
10,000+
$0.03315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the NXP3875YVL Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NXP3875YVL delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Nexperia USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: -
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
onsemi
50A02CH-TL-H
Microchip Technology
JAN2N2906AL
onsemi
BC807-40WT1G
onsemi
SBCP56-16T3G
Nexperia USA Inc.
PBSS4540Z,115
Fairchild Semiconductor
TN6718A
onsemi
MMBTA64LT1G
Diodes Incorporated
ZTP25040DFHQTA
onsemi
MJD6039T4G
onsemi