P1H06300D8
PN Junction Semiconductor
PN Junction Semiconductor
GANFET N-CH 650V 10A DFN 8X8
$4.98
Available to order
Reference Price (USD)
1+
$4.98000
500+
$4.9302
1000+
$4.8804
1500+
$4.8306
2000+
$4.7808
2500+
$4.731
Exquisite packaging
Discount
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The P1H06300D8 single MOSFET from PN Junction Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the P1H06300D8 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: 1.3V @ 1mA
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 55.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN8*8
- Package / Case: -
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