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PMN45EN,135

NXP USA Inc.
PMN45EN,135 Preview
NXP USA Inc.
MOSFET N-CH 30V 5.2A 6TSOP
$0.17
Available to order
Reference Price (USD)
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500+
$0.1683
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$0.1666
1500+
$0.1649
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$0.1632
2500+
$0.1615
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
  • Vgs (Max): 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457

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