P3M06060L8
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 40A TOLL
$10.38
Available to order
Reference Price (USD)
1+
$10.38000
500+
$10.2762
1000+
$10.1724
1500+
$10.0686
2000+
$9.9648
2500+
$9.861
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the P3M06060L8 single MOSFET from PN Junction Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the P3M06060L8 combines cutting-edge technology with PN Junction Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 188W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: TOLL
Related Products
Renesas Electronics America Inc
2SK3573-AZ
IXYS
IXFP36N20X3
Rohm Semiconductor
RQ1E070RPTR
STMicroelectronics
STH180N10F3-2
onsemi
NVMYS2D2N06CLTWG
Harris Corporation
RFP15P05
onsemi
NTMYS2D4N04CTWG
Infineon Technologies
BSC057N08NS3GATMA1
Alpha & Omega Semiconductor Inc.
AO6409
STMicroelectronics