P3M06300D8
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 9A DFN8*8
$4.98
Available to order
Reference Price (USD)
1+
$4.98000
500+
$4.9302
1000+
$4.8804
1500+
$4.8306
2000+
$4.7808
2500+
$4.731
Exquisite packaging
Discount
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Optimize your power electronics with the P3M06300D8 single MOSFET from PN Junction Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the P3M06300D8 combines cutting-edge technology with PN Junction Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 4.5A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 32W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN8*8
- Package / Case: DFN8*8
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