P3M12080G7
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 32A TO-263-7
$11.90
Available to order
Reference Price (USD)
1+
$11.90000
500+
$11.781
1000+
$11.662
1500+
$11.543
2000+
$11.424
2500+
$11.305
Exquisite packaging
Discount
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The P3M12080G7 from PN Junction Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to PN Junction Semiconductor's P3M12080G7 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 32A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 30mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 136W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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