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CSD19536KCS

Texas Instruments
CSD19536KCS Preview
Texas Instruments
MOSFET N-CH 100V 150A TO220-3
$5.44
Available to order
Reference Price (USD)
1+
$4.70000
10+
$4.20500
50+
$3.79260
100+
$3.46300
500+
$2.81980
1,000+
$2.39105
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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