GPI65005DF
GaNPower
GaNPower
GANFET N-CH 650V 5A DFN 5X6
$2.50
Available to order
Reference Price (USD)
1+
$2.50000
500+
$2.475
1000+
$2.45
1500+
$2.425
2000+
$2.4
2500+
$2.375
Exquisite packaging
Discount
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The GPI65005DF from GaNPower redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the GPI65005DF offers the precision and reliability you need. Trust GaNPower to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.4V @ 1.75mA
- Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V
- Vgs (Max): +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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