IXFL32N120P
IXYS
IXYS
MOSFET N-CH 1200V 24A I5PAK
$51.43
Available to order
Reference Price (USD)
25+
$35.84000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXFL32N120P by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXFL32N120P stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUSi5-Pak™
- Package / Case: ISOPLUSi5-Pak™
Related Products
Toshiba Semiconductor and Storage
TK065N65Z,S1F
IXYS
IXTA6N50D2-TRL
Vishay Siliconix
SQJA60EP-T1_BE3
Nexperia USA Inc.
BUK764R4-60E,118
Vishay Siliconix
SISS67DN-T1-GE3
Fairchild Semiconductor
FDFS6N303
IXYS
IXTP8N70X2M
STMicroelectronics
STP80NF12
Microchip Technology
APT12080LVRG
Infineon Technologies