SQJA60EP-T1_BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 30A POWERPAKSO-8
$1.16
Available to order
Reference Price (USD)
1+
$1.16000
500+
$1.1484
1000+
$1.1368
1500+
$1.1252
2000+
$1.1136
2500+
$1.102
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQJA60EP-T1_BE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SQJA60EP-T1_BE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8 Dual
- Package / Case: PowerPAK® SO-8 Dual
Related Products
Nexperia USA Inc.
BUK764R4-60E,118
Vishay Siliconix
SISS67DN-T1-GE3
Fairchild Semiconductor
FDFS6N303
IXYS
IXTP8N70X2M
STMicroelectronics
STP80NF12
Microchip Technology
APT12080LVRG
Infineon Technologies
SPP04N80C3XKSA1
Nexperia USA Inc.
PSMN4R8-100YSEX
Harris Corporation
IRFP141
Infineon Technologies