FDFS6N303
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 30V 6A 8SOIC
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FDFS6N303 single MOSFET from Fairchild Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Fairchild Semiconductor's FDFS6N303 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
IXYS
IXTP8N70X2M
STMicroelectronics
STP80NF12
Microchip Technology
APT12080LVRG
Infineon Technologies
SPP04N80C3XKSA1
Nexperia USA Inc.
PSMN4R8-100YSEX
Harris Corporation
IRFP141
Infineon Technologies
IPI023NE7N3G
Diodes Incorporated
DMN6075SQ-13
onsemi
FDMC8854
Fairchild Semiconductor