PBHV8515QAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 150V 0.5A DFN1010D-3
$0.42
Available to order
Reference Price (USD)
5,000+
$0.14850
10,000+
$0.14025
25,000+
$0.13613
Exquisite packaging
Discount
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The PBHV8515QAZ Bipolar Junction Transistor (BJT) from Nexperia USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the PBHV8515QAZ is a reliable component for demanding applications. Nexperia USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 60mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
- Power - Max: 325 mW
- Frequency - Transition: 75MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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