PBSS4160T,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 60V 1A TO236AB
$0.43
Available to order
Reference Price (USD)
3,000+
$0.17172
6,000+
$0.16218
15,000+
$0.15741
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PBSS4160T,215 Bipolar Junction Transistor (BJT) by Nexperia USA Inc. is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the PBSS4160T,215 provides consistent performance in demanding applications. Choose Nexperia USA Inc. for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
- Power - Max: 400 mW
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Microchip Technology
JANSF2N3700
Diodes Incorporated
ZXTN19055DZTA
Nexperia USA Inc.
BSP52,115
NTE Electronics, Inc
NTE327
Nexperia USA Inc.
PMSTA42,115
STMicroelectronics
BU941ZPFI
onsemi
TIP29CTU
Fairchild Semiconductor
KSP45BU
Rohm Semiconductor
2SCR552PFRAT100
onsemi