PBSS4350SPN,115
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PBSS4350SPN - SMALL
$0.15
Available to order
Reference Price (USD)
1,000+
$0.22100
2,000+
$0.20150
5,000+
$0.18850
10,000+
$0.18200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Precision meets power in the PBSS4350SPN,115 BJT Array by NXP USA Inc.. Specifically engineered for Class-B audio amplifiers and active filters, this Discrete Semiconductor Product delivers THD<0.1% for studio-grade sound reproduction. Telecommunications infrastructure and test equipment manufacturers rely on its stable beta characteristics across temperature ranges. The PBSS4350SPN,115 comes with anti-oxidation terminals, ensuring solderability even after prolonged storage.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 2.7A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A, 370mV @ 270mA, 2.7A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
- Power - Max: 750mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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