PBSS5130QAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 30V 1A DFN1010D-3
$0.05
Available to order
Reference Price (USD)
5,000+
$0.08092
10,000+
$0.07378
25,000+
$0.06902
50,000+
$0.06664
Exquisite packaging
Discount
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Experience unmatched performance with the PBSS5130QAZ Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the PBSS5130QAZ delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Nexperia USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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