PBSS5230QAZ
NXP Semiconductors
NXP Semiconductors
NEXPERIA PBSS5230QA - 30 V, 2 A
$0.06
Available to order
Reference Price (USD)
5,000+
$0.10160
Exquisite packaging
Discount
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The PBSS5230QAZ Bipolar Junction Transistor (BJT) by NXP Semiconductors is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the PBSS5230QAZ provides consistent performance in demanding applications. Choose NXP Semiconductors for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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