PBSS5330PA,135
Nexperia USA Inc.
Nexperia USA Inc.
PBSS5330PA - 30 V, 3 A PNP LOW V
$0.10
Available to order
Reference Price (USD)
10,000+
$0.13090
Exquisite packaging
Discount
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Experience unmatched performance with the PBSS5330PA,135 Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the PBSS5330PA,135 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Nexperia USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 2V
- Power - Max: 500 mW
- Frequency - Transition: 165MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerUDFN
- Supplier Device Package: 3-HUSON (2x2)
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