PBSS5612PA,115
NXP Semiconductors
NXP Semiconductors
NEXPERIA PBSS5612PA - SMALL SIGN
$0.10
Available to order
Reference Price (USD)
3,000+
$0.14520
6,000+
$0.13640
15,000+
$0.12760
30,000+
$0.12320
Exquisite packaging
Discount
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Discover the PBSS5612PA,115 Bipolar Junction Transistor (BJT) from NXP Semiconductors, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the PBSS5612PA,115 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NXP Semiconductors for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 6A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
- Power - Max: 2.1 W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerUDFN
- Supplier Device Package: 3-HUSON (2x2)
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