PDTA123TE,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS PNP 150MW SC75
$0.02
Available to order
Reference Price (USD)
1+
$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your PCB layout with NXP USA Inc.'s space-saving PDTA123TE,115. This pre-configured bipolar transistor eliminates external biasing components while delivering 250mW power dissipation. Applications span from smart home appliances to automotive lighting systems. NXP USA Inc. combines 20+ years of semiconductor expertise with cutting-edge silicon technology in this robust solution.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
Related Products
Infineon Technologies
BCR158WH6327
Infineon Technologies
BCR166E6327HTSA1
Nexperia USA Inc.
PDTB123YUX
Nexperia USA Inc.
PDTC143XMB,315
Nexperia USA Inc.
PBRP113ZT,215
Diodes Incorporated
DDTA123EUA-7-F
Toshiba Semiconductor and Storage
RN1105,LXHF(CT
Diodes Incorporated
DDTA123TE-7-F
Rohm Semiconductor
DTA115EMT2L
Nexperia USA Inc.