PDTB123ET,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
$0.33
Available to order
Reference Price (USD)
3,000+
$0.07625
6,000+
$0.06728
15,000+
$0.05831
30,000+
$0.05532
75,000+
$0.05233
150,000+
$0.04934
Exquisite packaging
Discount
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For designers seeking plug-and-play transistor solutions, PDTB123ET,215 offers unmatched convenience. Nexperia USA Inc.'s pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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