PDTB123YQAZ
Nexperia USA Inc.
Nexperia USA Inc.
PDTB113Z_123Y_143XQA_SER - 50 V,
$0.03
Available to order
Reference Price (USD)
5,000+
$0.05080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with Nexperia USA Inc.'s PDTB123YQAZ, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Nexperia USA Inc. delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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