PDTC123TU,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN 200MW SOT323
$0.03
Available to order
Reference Price (USD)
3,000+
$0.03009
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, PDTC123TU,115 offers unmatched convenience. Nexperia USA Inc.'s pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
Diodes Incorporated
DDTA143FE-7
Toshiba Semiconductor and Storage
RN1103MFV,L3F(CT
onsemi
SMMUN2216LT3G
Diodes Incorporated
DDTC144VE-7-F
onsemi
MUN2211T1
Nexperia USA Inc.
PDTA123JQCZ
Panasonic Electronic Components
UNR221E00L
onsemi
MUN2135T1G
Infineon Technologies
BCR135E6359HTMA1
Diotec Semiconductor