PDTC144EU,135
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN 200MW SOT323
$0.03
Available to order
Reference Price (USD)
10,000+
$0.02360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with Nexperia USA Inc.'s PDTC144EU,135, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Nexperia USA Inc. delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
onsemi
MMUN2214LT1G
Nexperia USA Inc.
PDTA123JU,115
Rohm Semiconductor
DTA144EUAT106
Nexperia USA Inc.
PDTC114YQBZ
NXP USA Inc.
PDTA124TE,115
Infineon Technologies
BCR169WH6327XTSA1
onsemi
SMUN5114T1G
Rohm Semiconductor
DTC113ZEBTL
Diodes Incorporated
DDTA143ECA-7-F
Toshiba Semiconductor and Storage