PEMH9,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
$0.44
Available to order
Reference Price (USD)
1+
$0.32000
10+
$0.24200
100+
$0.13680
500+
$0.09058
1,000+
$0.06944
Exquisite packaging
Discount
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Discover the versatility of Nexperia USA Inc.'s PEMH9,115, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The PEMH9,115 is widely used in IoT devices, medical equipment, and renewable energy systems. Nexperia USA Inc.'s advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the PEMH9,115 offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Not For New Designs
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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