PHD13003C,412
WeEn Semiconductors
WeEn Semiconductors
TRANS NPN 400V 1.5A TO92-3
$0.45
Available to order
Reference Price (USD)
1+
$0.42000
10+
$0.31400
100+
$0.19550
500+
$0.13378
1,000+
$0.10290
Exquisite packaging
Discount
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Optimize your electronic systems with the PHD13003C,412 Bipolar Junction Transistor (BJT) from WeEn Semiconductors. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the PHD13003C,412 delivers superior performance in diverse environments. WeEn Semiconductors's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
- Power - Max: 2.1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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