PHE13003A,412
NXP USA Inc.
NXP USA Inc.
NOW WEEN - PHE13003A - POWER BIP
$0.07
Available to order
Reference Price (USD)
10,000+
$0.06888
Exquisite packaging
Discount
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The PHE13003A,412 by NXP USA Inc. is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the PHE13003A,412 ensures efficient and stable operation. Backed by NXP USA Inc.'s reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 750mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V
- Power - Max: 2.1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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NXP USA Inc.