PHK31NQ03LT,518
NXP Semiconductors
NXP Semiconductors
NEXPERIA PHK31NQ03LT - 30.4A, 30
$0.50
Available to order
Reference Price (USD)
1+
$0.50000
500+
$0.495
1000+
$0.49
1500+
$0.485
2000+
$0.48
2500+
$0.475
Exquisite packaging
Discount
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Meet the PHK31NQ03LT,518 by NXP Semiconductors, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PHK31NQ03LT,518 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose NXP Semiconductors.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4235 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 6.9W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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