PHKD6N02LT,518
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 20V 10.9A SOT96-1
$0.29
Available to order
Reference Price (USD)
1+
$0.28694
500+
$0.2840706
1000+
$0.2812012
1500+
$0.2783318
2000+
$0.2754624
2500+
$0.272593
Exquisite packaging
Discount
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The PHKD6N02LT,518 by Nexperia USA Inc. is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the PHKD6N02LT,518 provides reliable operation under stringent conditions. Nexperia USA Inc.'s innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10.9A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
- Power - Max: 4.17W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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