PJD45N06A_L2_00001
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$0.78
Available to order
Reference Price (USD)
1+
$0.78000
500+
$0.7722
1000+
$0.7644
1500+
$0.7566
2000+
$0.7488
2500+
$0.741
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJD45N06A_L2_00001 single MOSFET from Panjit International Inc. is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the PJD45N06A_L2_00001 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Wolfspeed, Inc.
C3M0120090D
IXYS
IXFA6N120P-TRL
Toshiba Semiconductor and Storage
TPH2010FNH,L1Q
Infineon Technologies
BSS83PH6327XTSA1
Alpha & Omega Semiconductor Inc.
AOU2N60
onsemi
RFD3055LESM9A
Infineon Technologies
SPW11N60CFD
IXYS
IXTY1R6N100D2
Toshiba Semiconductor and Storage
SSM3K72KCT,L3F
Vishay Siliconix