TPH2010FNH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 5.6A 8SOP
$1.54
Available to order
Reference Price (USD)
5,000+
$0.59500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the TPH2010FNH,L1Q from Toshiba Semiconductor and Storage, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TPH2010FNH,L1Q ensures reliable performance in demanding environments. Upgrade your circuit designs with Toshiba Semiconductor and Storage's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
BSS83PH6327XTSA1
Alpha & Omega Semiconductor Inc.
AOU2N60
onsemi
RFD3055LESM9A
Infineon Technologies
SPW11N60CFD
IXYS
IXTY1R6N100D2
Toshiba Semiconductor and Storage
SSM3K72KCT,L3F
Vishay Siliconix
SISA04DN-T1-GE3
onsemi
NTMFS6H818NLT1G
Panjit International Inc.
PJP10NA80_T0_00001
STMicroelectronics