NTMFS6H818NLT1G
onsemi

onsemi
MOSFET N-CH 80V 22A/135A 5DFN
$1.05
Available to order
Reference Price (USD)
1+
$1.05477
500+
$1.0442223
1000+
$1.0336746
1500+
$1.0231269
2000+
$1.0125792
2500+
$1.0020315
Exquisite packaging
Discount
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Upgrade your designs with the NTMFS6H818NLT1G by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NTMFS6H818NLT1G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 190µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads