PJD80N04-AU_L2_000A1
Panjit International Inc.
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
$1.22
Available to order
Reference Price (USD)
1+
$1.22000
500+
$1.2078
1000+
$1.1956
1500+
$1.1834
2000+
$1.1712
2500+
$1.159
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJD80N04-AU_L2_000A1 from Panjit International Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Panjit International Inc.'s PJD80N04-AU_L2_000A1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Diodes Incorporated
DMN2024UQ-7
Vishay Siliconix
SQJ407EP-T1_BE3
Infineon Technologies
IPC50N04S5L5R5ATMA1
Nexperia USA Inc.
PMN55ENEH
Rohm Semiconductor
US5U2TR
Vishay Siliconix
SIA4265EDJ-T1-GE3
Vishay Siliconix
SI3433CDV-T1-E3
Alpha & Omega Semiconductor Inc.
AOTF5N100
Fairchild Semiconductor
HUFA76407P3
Fairchild Semiconductor