PJL9606_R2_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.77
Available to order
Reference Price (USD)
1+
$0.77000
500+
$0.7623
1000+
$0.7546
1500+
$0.7469
2000+
$0.7392
2500+
$0.7315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic projects with the PJL9606_R2_00001 from Panjit International Inc., a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the PJL9606_R2_00001 ensures top-notch performance. Panjit International Inc.'s expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 6A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
- Power - Max: 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
Related Products
Diodes Incorporated
ZXMHC3A01N8TC
Harris Corporation
HP4936DYT
Fairchild Semiconductor
FDU6670AS
Diodes Incorporated
DMN2005DLP4K-7
Vishay Siliconix
SI7212DN-T1-GE3
Advanced Linear Devices Inc.
ALD210808ASCL
Panjit International Inc.
PJL9830A_R2_00001
Vishay Siliconix
SIZ342ADT-T1-GE3
Nexperia USA Inc.
PMGD290XN,115
Nexperia USA Inc.