PMGD290XN,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.86A 6TSSOP
$0.46
Available to order
Reference Price (USD)
3,000+
$0.10890
6,000+
$0.10230
15,000+
$0.09570
30,000+
$0.08778
75,000+
$0.08448
Exquisite packaging
Discount
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The PMGD290XN,115 by Nexperia USA Inc. is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the PMGD290XN,115 offers superior functionality and longevity. Trust Nexperia USA Inc. to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 860mA
- Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
- Power - Max: 410mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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