SSM6N35FE,LM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 0.18A ES6
$0.41
Available to order
Reference Price (USD)
4,000+
$0.07000
8,000+
$0.06300
12,000+
$0.05600
28,000+
$0.05250
100,000+
$0.04900
Exquisite packaging
Discount
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Discover the high-performance SSM6N35FE,LM from Toshiba Semiconductor and Storage, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the SSM6N35FE,LM delivers unmatched performance. Trust Toshiba Semiconductor and Storage's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180mA
- Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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