PJQ4602_R1_00001

Panjit International Inc.

Manufacturer

Panjit International Inc.

Description:

30V COMPLEMENTARY ENHANCEMENT MO

Datasheet:

PJQ4602_R1_00001 Datasheet

$0.79

Available to order

Reference Price (USD)

$0.79000

500+

$0.7821

1000+

$0.7742

1500+

$0.7663

2000+

$0.7584

2500+

$0.7505

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

Upgrade your electronic designs with the PJQ4602_R1_00001 by Panjit International Inc., a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the PJQ4602_R1_00001 ensures energy efficiency and robust performance. Panjit International Inc.'s commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.

Specifications

Product Status: Active
FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V
Power - Max: 2W (Ta), 17.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: DFN3030B-8