PJQ5458A_R2_00001
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$0.68
Available to order
Reference Price (USD)
1+
$0.68000
500+
$0.6732
1000+
$0.6664
1500+
$0.6596
2000+
$0.6528
2500+
$0.646
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJQ5458A_R2_00001 from Panjit International Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Panjit International Inc.'s PJQ5458A_R2_00001 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 27W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN
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