PJS6603_S2_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
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Discover the high-performance PJS6603_S2_00001 from Panjit International Inc., a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the PJS6603_S2_00001 delivers unmatched performance. Trust Panjit International Inc.'s cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Panjit International Inc.