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SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage
SSM6L35FU(TE85L,F) Preview
Toshiba Semiconductor and Storage
MOSFET N/P-CH 20V 0.18A/0.1A US6
$0.09
Available to order
Reference Price (USD)
3,000+
$0.08460
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6

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