TPD3215M
Transphorm
Transphorm
GANFET 2N-CH 600V 70A MODULE
$175.13
Available to order
Reference Price (USD)
1+
$178.83000
10+
$172.66200
Exquisite packaging
Discount
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Upgrade your electronic designs with the TPD3215M by Transphorm, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the TPD3215M ensures energy efficiency and robust performance. Transphorm's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
- Power - Max: 470W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: Module
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