PJW5N10_R2_00001
Panjit International Inc.
Panjit International Inc.
100V N-CHANNEL ENHANCEMENT MODE
$0.54
Available to order
Reference Price (USD)
1+
$0.54000
500+
$0.5346
1000+
$0.5292
1500+
$0.5238
2000+
$0.5184
2500+
$0.513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the PJW5N10_R2_00001 by Panjit International Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PJW5N10_R2_00001 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
Related Products
onsemi
NVTFS014P04M8LTAG
Diodes Incorporated
DMTH47M2SPSW-13
onsemi
NTD23N03R-001
onsemi
NVMFS6H852NLT1G
Fairchild Semiconductor
FQPF3P20
Taiwan Semiconductor Corporation
TSM085P03CS RLG
Infineon Technologies
IPI65R150CFDXKSA1
IXYS
IXFH74N20P
Nexperia USA Inc.
PMPB07R3VPX
Alpha & Omega Semiconductor Inc.