PMBFJ112,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 40V 0.3W SOT23
$0.19
Available to order
Reference Price (USD)
1+
$0.18719
500+
$0.1853181
1000+
$0.1834462
1500+
$0.1815743
2000+
$0.1797024
2500+
$0.1778305
Exquisite packaging
Discount
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The PMBFJ112,215 from NXP USA Inc. represents the next generation of JFET technology in Discrete Semiconductor Products. This N-channel/P-channel JFET delivers exceptional IDSS matching and transconductance linearity for precision analog designs. Key advantages include ultra-low 1/f noise, wide dynamic range, and stable operation from -55 C to +150 C. The PMBFJ112,215 is widely adopted in scientific instrumentation, including particle detectors, mass spectrometers, and telescope sensor arrays. Commercial applications span from boutique guitar effects pedals to industrial process control systems. Engineers trust this JFET for its repeatable parameters batch-to-batch and exceptional longevity in continuous operation scenarios.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
- Resistance - RDS(On): 50 Ohms
- Power - Max: 300 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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