PMBT3946YPN,125
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN/PNP 40V 0.2A 6TSSOP
$0.38
Available to order
Reference Price (USD)
3,000+
$0.05635
6,000+
$0.04900
15,000+
$0.04165
30,000+
$0.03920
75,000+
$0.03675
150,000+
$0.03430
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMBT3946YPN,125 from Nexperia USA Inc. sets new benchmarks for Bipolar Transistor Arrays in consumer electronics. Its dual/triple transistor configuration enables sophisticated circuit designs for smart home devices, wearables, and battery management systems. This Discrete Semiconductor Product features gold-bonded leads for superior connectivity in high-vibration applications like automotive ECUs. Engineers value its drop-in replacement compatibility with legacy systems, reducing redesign efforts during component upgrades.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 300MHz, 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
onsemi
SBC846BDW1T1G
Linear Integrated Systems, Inc.
IT124 TO-78 6L
Sanken
SMA5106
Central Semiconductor Corp
CMLT3906EG TR PBFREE
Infineon Technologies
BC847SH6327XTSA1
Central Semiconductor Corp
CMKT5088 TR PBFREE
Rohm Semiconductor
IMX4T108
Toshiba Semiconductor and Storage
HN2C01FU-GR(T5L,F)
Nexperia USA Inc.
PBSS4160DSZ
Microchip Technology